Hole spin coherence in a Ge/Si heterostructure nanowire.
نویسندگان
چکیده
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* 0.18 μs exceeds corresponding measurements in III–V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
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عنوان ژورنال:
- Nano letters
دوره 14 6 شماره
صفحات -
تاریخ انتشار 2014